ECTS credits ECTS credits: 4.5
ECTS Hours Rules/Memories Student's work ECTS: 74.2 Hours of tutorials: 2.25 Expository Class: 18 Interactive Classroom: 18 Total: 112.45
Use languages Spanish, Galician
Type: Ordinary Degree Subject RD 1393/2007 - 822/2021
Departments: Electronics and Computing
Areas: Electronics
Center Faculty of Physics
Call: Second Semester
Teaching: With teaching
Enrolment: Enrollable
Study and characterization of semiconductor devices and their physical foundations. We will focus on diodes, bipolar transistors and field effect transistors. Different models for these devices will be presented.
Learning outcomes, the student will demonstrate:
- Who knows the operating principles of current electronic devices and the circuit models associated with these devices.
- That it is capable of studying and characterizing semiconductor devices and their physical foundations.
INTRODUCTION TO SEMICONDUCTORS. Properties two semiconductors. Intrinsic and extrinsic semiconductors.
PHYSICS OF SEMICONDUCTORS. BANDS OF ENERGY. Carrier concentration in thermal equilibrium and out of balance. Calculation of the distribution of carriers. Concentrations based on energy. Concentration in doped function. Dependence with temperature. Fermi level.
TRANSPORTATION PHENOMENA IN SEMICONDUCTORS. Drag currents Broadcast currents. Final expressions of the current. Mechanisms of generation-recombination. Continuity equations.
THE UNION PN. Structure of the union. Static union PN: Qualitative analysis. Emptying approach. Gradual union. Electrokinetic problem of PN junction: Qualitative analysis. The equation of the ideal diode. Deviations from the ideal union. Admittance of the union
THE BIPOLAR UNION TRANSISTOR. Structure of the bipolar. Introduction to the operating modes. Qualitative analysis: Band diagram. Currents in the transistor. Ideal characteristics Ebers-Moll equations. The real transistor. Models of the BJT transistor.
THE MOSFET TRANSISTOR. Estrutura of the MOSFET. Band diagram. Capacity-tension characteristics. Modes of operation. Models of the MOSFET transistor.
Practical contents:
* Study of the properties of semiconductors.
* Analysis of the characteristics of PN junctions.
* Study of the MOS and MOSFET simulation tools.
Jasprit Singh, Dispositivos Semiconductores, Editorial McGraw-Hill, 1997.
G. W. Neudeck, El diodo PN de unión, 2; ediciónn, Addison-Wesley Iberoamericana, 1994.
G. W. Neudeck, El transistor bipolar de unión, 2; edición, Addison-Wesley Iberoamericana, 1994.
Kwok K. Ng, Complete Guide to Semiconductor Devices, Editorial Wiley, 2002.
M. Shur, Compound Semiconductor Electronics, Editorial World Scientific, 1996.
Peter Y. Yu, Fundamentals of Semiconductors, Editorial Springer, 2001.
R. F. Pierret, Fundamentos de semiconductores, 2 edición, Addison-Wesley Iberoamericana, 1994.
R. F. Pierret, Advanced semiconductor fundamentals, Addison-Wesley, 1987.
Sze, S.M., Physics of semiconductor devices, 2 edición, John Wiley & Sons, New York, 1981.
S. M. Sze, Semiconductor Devices, Editorial Wile, 2002.
Shalimova, Física de los semiconductores, Ed. MIR, 1975.
Yang, E.S., Fundamentals of semiconductor devices, McGraw-Hill Book Company, New York, 1978.
Wang, F.F.Y., Introduction to solid state electronics, North-Holland Pub. Company, Amsterdam, 1980.
Online documents:
http://pveducation.org/pvcdrom
http://ecee.colorado.edu/~bart/book/
In the Virtual Classroom, teaching material and links to online resources
5.5.1.5.1 BASIC AND GENERAL
CB1 - That students have demonstrated to possess and understand knowledge in an area of study that starts from the base of education
general secondary school, and is usually found at a level that, while supported by advanced textbooks, also includes some aspects that
they imply knowledge coming from the vanguard of their field of study.
CB2 - That students know how to apply their knowledge to their work or vocation in a professional manner and possess the skills that are usually
demonstrate by means of the elaboration and defense of arguments and the resolution of problems within their area of study.
CB3 - That students have the ability to gather and interpret relevant data (usually within their area of study) to issue
judgments that include a reflection on relevant social, scientific or ethical issues.
CG1 - Possess and understand the most important concepts, methods and results of the different branches of Physics, with a historical perspective of
its development
CG2 - Have the capacity to gather and interpret data, information and relevant results, obtain conclusions and issue reasoned reports in
scientific, technological or other problems that require the use of knowledge of Physics.
CG3 - Apply both the theoretical and practical knowledge acquired as well as the capacity for analysis and abstraction in the definition and approach
of problems and in the search of its solutions both in academic and professional contexts.
5.5.1.5.2 TRANSVERSAL
CT1 - Acquire analysis and synthesis capacity.
CT2 - Have the capacity for organization and planning.
CT5 - Develop critical reasoning.
5.5.1.5.3 SPECIFIC
CE1 - Have a good understanding of the most important physical theories, locating in their logical and mathematical structure, their support
experimental and the physical phenomenon that can be described through them.
CE2 - Be able to clearly handle orders of magnitude and make appropriate estimates in order to develop a clear perception of
situations that, although physically different, show some analogy, allowing the use of known solutions to new problems.
CE5 - Be able to perform the essentials of a process or situation and establish a working model of it, as well as perform the approximations
required in order to reduce the problem to a manageable level. He will demonstrate critical thinking to build physical models.
CE6 - Understand and master the use of mathematical and numerical methods most commonly used in Physics
CE8 - Be able to manage, search and use bibliography, as well as any source of relevant information and apply it to research works
and technical development of projects.
In-person and interactive classes with laboratory practices.
A course will be activated on the Virtual Campus.
There will be a final exam of the semester made up of theory and problems and it will be necessary to pass each part separately in order to pass this subject. This exam will count 70% of the final grade in the first opportunity. Compulsory activities will be carried out (practices, problems, partial exams, etc.) that will count 30% of the final grade and that is necessary to pass the subject. It is mandatory to attend in all the classes. In case of not obtaining a mark higher than 5 in any of the parts, the note will correspond to the part not passed.
It is compulsory to attend all lectures to pass the subject.
The student's grade in the second opportunity will correspond to the grade obtained in the corresponding official exam.
Students who did not attend the exam or underwent the evaluation of any other compulsory activity will obtain the grade of not presented.
For cases of fraudulent performance of exercises or tests, the one set forth in the Regulations for the evaluation of student academic performance and the review of grades will apply.
PRESENTIAL WORK IN THE CLASSROOM
Hours
Blackboard hours in large group: 24
Hours of laboratory and small group interactions: 18
Tutorials in very small or individualized groups: 3
Other sessions with teacher
Specify:
Total hours classroom work in the classroom: 45
Additional personal work of the student: 67.5
Carry out a follow-up of material pola súa construtivo character taking advantage of seminary classes and practices.
Electromagnetismo I, II. Física del Estado Sólido. Mecánica Estatística.
The subject will be taught mainly in Spanish.
Antonio Jesus Garcia Loureiro
Coordinador/a- Department
- Electronics and Computing
- Area
- Electronics
- Phone
- 881816467
- antonio.garcia.loureiro [at] usc.es
- Category
- Professor: University Professor
Javier Fernandez Lozano
- Department
- Electronics and Computing
- Area
- Electronics
- javierfernandez.lozano [at] usc.es
- Category
- USC Pre-doctoral Contract
Jose Augusto Moares Guedes
- Department
- Electronics and Computing
- Area
- Electronics
- joseaugustomoares.guedes [at] usc.es
- Category
- USC Pre-doctoral Contract
| Monday | |||
|---|---|---|---|
| 17:30-19:30 | Grupo /CLE_01 | Spanish | Main Hall |
| Tuesday | |||
| 17:30-19:30 | Grupo /CLE_02 | Spanish | Main Hall |
| Wednesday | |||
| 17:30-19:30 | Grupo /CLE_01 | Spanish | Main Hall |
| Thursday | |||
| 17:30-19:30 | Grupo /CLE_02 | Spanish | Main Hall |
| 12.22.2023 09:00-12:00 | Grupo /CLE_01 | 3 (Computer Science) |
| 05.28.2024 09:00-13:00 | Grupo /CLE_01 | 3 (Computer Science) |
| 05.28.2024 09:00-13:00 | Grupo /CLE_01 | Classroom 0 |
| 05.28.2024 09:00-13:00 | Grupo /CLE_01 | Classroom 130 |
| 05.28.2024 09:00-13:00 | Grupo /CLE_01 | Classroom 6 |
| 05.28.2024 09:00-13:00 | Grupo /CLE_01 | Classroom 830 |
| 07.05.2024 16:00-20:00 | Grupo /CLE_01 | 3 (Computer Science) |
| 07.05.2024 16:00-20:00 | Grupo /CLE_01 | Classroom 130 |
| 07.05.2024 16:00-20:00 | Grupo /CLE_01 | Classroom 6 |
| 07.05.2024 16:00-20:00 | Grupo /CLE_01 | Classroom 830 |